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Characterization of devices and circuits under cryogenic temperature environment

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极低温环境下器件及电路特性分析

Journal Information

J. Hefei Univ. Tech. (Nat. Sci.), May.2026, Vol.49 No.5: 637-641

DOI: 10.3969/j.issn.1003-5060.2026.05.009

Authors

LI Mo, ZHANG Zhang, CHEN Meiyi, PU Xiangrong

(School of Microelectronics, Hefei University of Technology, Hefei 230601, China)

Abstract and Keywords

Abstract: Cryogenic electronic devices and circuits are becoming more and more important in modern high-tech industries. This paper uses the BSIM4 model to study the characteristics of complementary metal-oxide-semiconductor (CMOS) devices and circuits in a 4 K cryogenic temperature environment under the 110 nm process node. At the device level, the characteristics of metal-oxide-semiconductor field-effect transistor (MOSFET) devices under cryogenic temperature environment are analyzed, and compared with the characteristics of devices under a 300 K room temperature environment. The subthreshold slope of the device is increased by 2-3 times, the threshold voltage is increased by 50-100 mV, and the current is increased by 1-2 times. Based on relevant theories, the phenomena such as kink effect of MOS devices under cryogenic temperature are analyzed. At the circuit level, the simple circuits are built using CMOS devices, and the changes of digital and analog circuits under cryogenic temperature are observed. The increase in carrier mobility improves performance such as circuit gain, but at the same time, the static operating point of the circuit is changed due to the increase in threshold voltage, which affects the performance of the circuit. This study provides theoretical and experimental basis for the design of dedicated cryogenic custom circuits.

Keywords: cryogenic temperature; metal-oxide-semiconductor field-effect transistor(MOSFET); kink effect; threshold voltage; carrier mobility; subthreshold slope

作者信息

李墨，张章，陈美意，蒲向荣

（合肥工业大学微电子学院，安徽合肥230601）

摘要和关键词

摘要: 极低温电子器件及电路在现代高科技产业中的重要性日益凸显。文章基于 BSIM4 模型, 在 110 nm 工艺节点下对互补金属氧化物半导体 (complementary metal-oxide-semiconductor, CMOS) 器件及电路在 4 K 极低温环境下的特性进行分析研究。在器件层面: 分析金属-氧化物-半导体场效应晶体管 (metal-oxide-semiconductor field-effect transistor, MOSFET) 在极低温下的特性变化, 并与 300 K 室温环境下的器件性能进行对比, 发现器件的亚阈值斜率增大 2~3 倍, 阈值电压升高 50~100 mV, 电流提升 1~2 倍; 同时结合理论, 对极低温下 MOS 器件出现的翘曲效应等现象进行分析。在电路层面: 利用 CMOS 器件构建简单电路, 观察数字、模拟电路在极低温环境下的行为变化; 载流子迁移率的提高使电路增益等性能得到改善, 但同时阈值电压的升高会导致静态工作点偏移, 进而影响电路性能。文章研究结果为专用极低温定制电路的设计提供了一定的理论和实验依据。

关键词: 极低温；场效应管；翘曲效应；阈值电压；载流子迁移率；亚阈值斜率

Funding

模拟集成电路国家重点实验室开放课题资助项目（JCKY2022210C001）

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