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Breakdown voltage of enhancement-mode AlGaN/GaN/AlGaN HEMT improved by drain field plate structure

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漏场板提升增强型 AlGaN/GaN/AlGaN HEMT击穿电压的研究

Journal Information

J. Hefei Univ. Tech. (Nat. Sci.), May.2025, Vol.48 No.5: 622-627

DOI: 10.3969/j.issn.1003-5060.2025.05.007

Authors

ZHOU Shigang, YU Yongqiang, XIA Yuanzhi, QIAN Junhan, WU Chunyan

(School of Microelectronics, Hefei University of Technology, Hefei 230601, China)

Abstract and Keywords

Abstract: Owing to the presence of back barrier of the p-GaN cap layer enhancement-mode AlGaN/GaN/AlGaN HEMT, the leakage current in GaN buffer layer can be significantly reduced and the breakdown voltage can be improved. However, the breakdown voltage of the device can be seriously decreased due to the concentration of the peak electric field intensity below the drain electrode. The modulation of the breakdown voltage of the p-GaN cap layer enhancement-mode AlGaN/GaN/AlGaN HEMT by the structure of the drain field plate and the thickness of the passivation layer below the drain field plate is explored based on Silvaco ATLAS simulation. The distribution of the peak electric field intensity below the drain electrode is optimized. It can be found that the breakdown voltage of the device can be significantly improved by the introduction of the drain field plate. With the increasing of the thickness of the drain field plate in the range of 0.10-1.10 $ \mu $m, the breakdown voltage increases. With the increasing of the thickness of the passivation layer below the drain field plate, the peak electric field intensity of the channel below the edge of the drain field plate decreases, and the peak electric field intensity of the channel below the drain electrode increases. When the thickness of the passivation layer increases to 0.25 $ \mu $m, the peak electric field intensity of the channel reaches the minimum value. Significantly, the improved breakdown voltage of the device is approaching to 1370. V, showing an increase of 53.6% compared to that of the device without drain field plate structure. The improved breakdown voltage can be attributed to the electric field modulation effect of the drain field plate, which reduces the peak electric field intensity.

Keywords: p-GaN cap layer enhancement-mode AlGaN/GaN/AlGaN HEMT; drain field plate; passivation layer; breakdown voltage; electric field intensity

作者信息

周世刚，于永强，夏元治，钱君涵，吴春艳

（合肥工业大学微电子学院，安徽合肥230601）

摘要和关键词

摘要: p-GaN 帽层增强型 AlGaN/GaN/AlGaN HEMT 存在背势垒, 因此可显著降低 GaN 缓冲层泄漏电流, 提升器件击穿电压, 但会面临漏极下方电场强度峰值集中的问题, 导致击穿电压偏离。文章通过 Silvaco ATLAS 仿真, 探讨漏场板结构和漏场板下钝化层厚度对 p-GaN 帽层增强型 AlGaN/GaN/AlGaN HEMT 器件击穿电压的调制, 优化漏极下方电场强度峰值分布。结果表明: 漏场板的引入可显著提升器件的击穿电压, 漏场板厚度在 0.10~1.10 μm 范围时, 器件的击穿电压随着漏场板厚度增大而增大; 随着漏场板下方钝化层厚度的增大, 漏场板边缘下方的沟道电场强度峰值减小, 漏极下方的沟道电场强度峰值增大, 当漏场板下方钝化层厚度增厚至 0.25 μm 时, 沟道电场强度峰值最小, 器件的击穿电压提升至 1370 V, 增幅达 53.6%。研究发现, 击穿电压的提升主要是由于漏场板的电场调制效应降低了电场强度峰值。

关键词: p-GaN 帽层增强型 AlGaN/GaN/AlGaN HEMT；漏场板；钝化层；击穿电压；电场强度 中图分类号：TN386.6 文献标志码：A 文章编号：1003-5060（2025）05-0622-06

Funding

安徽省自然科学基金资助项目（2208085MF177）

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