合肥工业大学校徽

合肥工业大学学报自科版

合肥工业大学学报(自然科学版)

JOURNAL OF HEFEI UNIVERSITY OF TECHNOLOGY (NATURAL SCIENCE)

主管：中华人民共和国教育部

主办：合肥工业大学

ISSN 1003-5060, CN 34-1083/N

DRAM 内置免校准温度传感器设计

Design of built-in calibration-free temperature sensor for DRAM

期刊信息

合肥工业大学（自然科学版），2025年9月，第48卷第9期：1208-1212

DOI: 10.3969/j.issn.1003-5060.2025.09.008

作者信息

汪于皓，肖昊

（合肥工业大学微电子学院，安徽合肥230601）

摘要和关键词

摘要: 随着工艺制程的不断微缩,动态随机存储器(dynamic random access memory, DRAM)的集成度持续提高,单颗芯片上存储单元的数目呈指数增长,随之带来的是芯片发热严重和泄漏电流增大等问题,为了实时监测内部温度并控制相应的刷新操作,DRAM需要在内部集成温度传感器。文章从DRAM的基本结构、工作原理和实际工作中对内置温度传感器的需求出发,研究不同读出架构的集成式温度传感器的优缺点,考虑到感温精度、感温范围、功耗和成本等因素以及DRAM产品规格说明书中对内置温度传感器的要求,设计出一款基于时域读出架构的免校准低功耗温度传感器。采用19 nm的互补金属氧化物半导体(complementary metal oxide semiconductor, CMOS)工艺进行仿真验证,结果表明,免校准的前提下,该温度传感器在0~110 ℃的感温范围内具有3 ℃的仿真精度,版图面积为0.189 mm²,平均功耗为340.31 $ \mu $W,感温时间为550 $ \mu $s。文章设计的温度传感器满足DRAM对于内置温度传感器的要求,且大大降低了DRAM的生产成本。

关键词: 动态随机存储器（DRAM）；温度传感器；免校准；双极结型晶体管（BJT）；泄漏电流；刷新

Authors

WANG Yuhao, XIAO Hao

(School of Microelectronics, Hefei University of Technology, Hefei 230601, China)

Abstract and Keywords

Abstract: With the continuous miniaturization of the process technology, the integration of dynamic random access memory (DRAM) keeps increasing, and the number of memory cells on a single memory chip grows exponentially, bringing about the problems such as severe chip heating and increased leakage current. In order to monitor the internal temperature in real time and control the corresponding refresh operation, DRAM requires an integrated temperature sensor. Based on the basic structure and working principle of DRAM and the demand for built-in temperature sensor, this paper studies the advantages and disadvantages of integrated temperature sensor with different readout architectures. Considering the temperature sensing accuracy, temperature sensing range, power consumption and cost, as well as the requirement of built-in temperature sensor in DRAM specification, a calibration-free low-power temperature sensor based on time-domain readout architecture is designed. The simulation was conducted using 19 nm complementary metal oxide semiconductor (CMOS) technology. The results show that the temperature sensor has a simulation accuracy of $ 3\;^{\circ}C $ in the temperature sensing range of $ 0-110\;^{\circ}C $ without calibration, the layout area is $ 0.189\;mm^{2} $, the average power consumption is $ 340.31\;\muW $, and the temperature sensing time is $ 550\;\mus $. The temperature sensor meets the DRAM requirements for built-in temperature sensor, and greatly reduces the production cost of DRAM.

Keywords: dynamic random access memory(DRAM); temperature sensor; calibration-free; bipolar junction transistor(BJT); leakage current; refresh

基金信息

国家自然科学基金资助项目（61974039）

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