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J. Hefei Univ. Tech. (Nat. Sci.)

合肥工业大学学报(自然科学版)

JOURNAL OF HEFEI UNIVERSITY OF TECHNOLOGY (NATURAL SCIENCE)

Competent Authorities: Ministry of Education of the People's Republic of China

Sponsor by: Hefei University of Technology

ISSN 1000-1646, CN 34-1001/N

Surface modification and electrical transport property of graphene-based films

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石墨烯基薄膜的表面改性与电输运性能研究

Journal Information

J. Hefei Univ. Tech. (Nat. Sci.), Mar.2024, Vol.47 No.3: 428-432

DOI: 10.3969/j.issn.1003-5060.2024.03.023

Authors

NIU Liang, YANG Yuanjun, YANG Qingqing, WANG Wei, LI Qiang

(School of Physics, Hefei University of Technology, Hefei 230601, China)

Abstract and Keywords

Abstract: In this paper, graphene oxide(GO) films were synthesized from natural flake graphite by modified Hummers method, and then nitrogen ions implantation and annealing were combined to prepare nitrogen-doped reduced graphene oxide(NrGO) films. The effects of nitrogen ions implantation on the surface morphology and microstructure of graphene-based films were investigated by scanning electron microscope(SEM), X-ray diffraction(XRD), Raman spectroscopy and X-ray photoelectron spectroscopy(XPS) characterization. The results showed that under the bombardment of nitrogen ions, carbon atoms were lost and nitrogen atoms were substituted for doping. Atoms migration and rearrangement on the surface of graphene-based films led to the formation of nitrogen doping and nanoscale pores on the surface layers of NrGO films. The nitrogen doping content in the surface layers of nitrogen-doped graphene oxide(NGO) films was up to 10.86%, and after annealing the nitrogen content in the surface layers of NrGO films was also up to 9.90%. In addition, I-V tests found that nitrogen ions implantation and thermal treatment also had a significant effect on the electrical transport property of the graphene-based films.

Keywords: graphene-based films; nitrogen doping; ions implantation; surface modification; electrical transport property

作者信息

牛亮，杨远俊，杨庆庆，王伟，李强

（合肥工业大学物理学院，安徽合肥230601）

摘要和关键词

摘要: 文章以天然鳞片石墨为原料，采用改进 Hummers 方法制备氧化石墨烯（graphene oxide，GO）薄膜，再利用氮离子注入和热处理得到表面改性的氮掺杂还原氧化石墨烯（nitrogen-doped reduced graphene oxide，NrGO）薄膜；利用扫描电子显微镜（scanning electron microscope，SEM）、X 射线衍射（X-ray diffraction，XRD）、拉曼（Raman）光谱和 X 射线光电子能谱（X-ray photoelectron spectroscopy，XPS）表征并系统研究氮离子注入对石墨烯基薄膜表面形貌和微观结构的影响。结果表明：氮离子注入会造成石墨烯基薄膜表面层内碳原子的缺失和氮原子的替代掺杂，从而在 NrGO 薄膜表面层内实现氮掺杂并产生纳米级孔洞；氮掺杂氧化石墨烯（nitrogen-doped graphene oxide，NGO）薄膜表面层氮掺杂量（质量分数）高达 10.86%，热处理后的 NrGO 薄膜表面层氮掺杂量（质量分数）可达 9.90%；I-V 测试发现，氮离子注入和热处理对石墨烯基薄膜的电输运性能也产生显著影响。

关键词: 石墨烯基薄膜；氮掺杂；离子注入；表面改性；电输运性能

Funding

中国科学技术大学合肥微尺度物质科学国家研究中心开发课题资助项目（KF2020002）

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