Abstract: Cryogenic electronic devices and circuits are becoming more and more important in modern high-tech industries. This paper uses the BSIM4 model to study the characteristics of complementary metal-oxide-semiconductor (CMOS) devices and circuits in a 4 K cryogenic temperature environment under the 110 nm process node. At the device level, the characteristics of metal-oxide-semiconductor field-effect transistor (MOSFET) devices under cryogenic temperature environment are analyzed, and compared with the characteristics of devices under a 300 K room temperature environment. The subthreshold slope of the device is increased by 2-3 times, the threshold voltage is increased by 50-100 mV, and the current is increased by 1-2 times. Based on relevant theories, the phenomena such as kink effect of MOS devices under cryogenic temperature are analyzed. At the circuit level, the simple circuits are built using CMOS devices, and the changes of digital and analog circuits under cryogenic temperature are observed. The increase in carrier mobility improves performance such as circuit gain, but at the same time, the static operating point of the circuit is changed due to the increase in threshold voltage, which affects the performance of the circuit. This study provides theoretical and experimental basis for the design of dedicated cryogenic custom circuits.
Keywords: cryogenic temperature; metal-oxide-semiconductor field-effect transistor(MOSFET); kink effect; threshold voltage; carrier mobility; subthreshold slope
合肥工业大学学报自科版