Abstract: In this paper, graphene oxide(GO) films were synthesized from natural flake graphite by modified Hummers method, and then nitrogen ions implantation and annealing were combined to prepare nitrogen-doped reduced graphene oxide(NrGO) films. The effects of nitrogen ions implantation on the surface morphology and microstructure of graphene-based films were investigated by scanning electron microscope(SEM), X-ray diffraction(XRD), Raman spectroscopy and X-ray photoelectron spectroscopy(XPS) characterization. The results showed that under the bombardment of nitrogen ions, carbon atoms were lost and nitrogen atoms were substituted for doping. Atoms migration and rearrangement on the surface of graphene-based films led to the formation of nitrogen doping and nanoscale pores on the surface layers of NrGO films. The nitrogen doping content in the surface layers of nitrogen-doped graphene oxide(NGO) films was up to 10.86%, and after annealing the nitrogen content in the surface layers of NrGO films was also up to 9.90%. In addition, I-V tests found that nitrogen ions implantation and thermal treatment also had a significant effect on the electrical transport property of the graphene-based films.
Keywords: graphene-based films; nitrogen doping; ions implantation; surface modification; electrical transport property
合肥工业大学学报自科版