二维半导体 InSe 纳米片光电探测器制备及其光电性能研究

文章通过机械剥离、干法转移和电子束刻蚀等技术或工艺制备了范德瓦尔斯硒化铟(InSe)纳米片光电探测器。利用原子力显微镜(atomic force microscope, AFM)和显微共焦拉曼光谱仪分别对器件形貌与γ相InSe的物相进行了表征，研究了室温下范德瓦尔斯InSe纳米片光电探测器件的光电特性对激光波长、激光功率密度及偏置电压等参数的依赖关系。实验结果表明：在532 nm波长下，该探测器的响应度约为12.9 mA/W，外量子效率约为2.5%，比探测率高达 $ 9.6 \times 10^{7} $ Jones；随着光强增加，该器件光电流显著增加，并且在周期性变化的光照下光电流可以同步复现，显示了器件在室温下具有良好的瞬态光吸收特性与稳定性。研究结果表明，基于范德瓦尔斯InSe纳米片的探测器有望应用于室温光电探测。

In this work, van der Waals nano-flake InSe photodetectors were prepared by mechanical exfoliation, dry transfer and electron beam lithography (EBL). Atomic force microscope (AFM) and micro confocal laser Raman spectroscopy were used to characterize the device morphology and crystalline phase of $ \gamma $-InSe, respectively, and the dependence of the photoelectric properties of the van der Waals nano-flake InSe photodetectors at room temperature on laser wavelength, laser power density and bias voltage was further investigated. It is observed that the responsivity of the detector at 532 nm is approximately 12.9 mA/W, the external quantum efficiency is approximately 2.5%, and the specific detectivity reaches $ 9.6 \times 10^{7} $ Jones. With the increase of light intensity, the photocurrent of the device also increases significantly. Moreover, the photocurrent can be synchronized under periodically varying laser illumination, implying a fast, transient photo-absorption and stable photoelectric response at room temperature. These results indicate promising photodetection applications using van der Waals nano-flake InSe detectors at room temperature.