六方氮化硼中自旋缺陷性质的相干测量

六方氮化硼作为一种宽禁带二维半导体材料，能够容纳丰富的可光学寻址自旋缺陷，其中备受关注的硼空位缺陷在室温下表现出超高的荧光亮度和光学稳定性，且具有易操控的自旋结构，因此成为量子精密测量领域的热门方向。文章使用$532\mathrm{nm}$ 激光和共面波导微波辐射结构，实现硼空位缺陷的自旋态初始化和相干操控，在室温下探测到对比度较高的光探测磁共振(optically detected magnetic resonance, ODMR)谱，并研究了外磁场对电子自旋的影响；在此基础上，进一步通过测量Rabi振荡研究该缺陷的相干特性，并成功观测到核自旋的ODMR谱。文章实现了对六方氮化硼中硼空位自旋缺陷的基本性质测量和相干操控，为其在量子信息科学中的进一步应用打下了基础。

Hexagonal boron nitride, as a wide bandgap two-dimensional semiconductor material, can accommodate a wealth of optically addressable spin defects. Among them, boron vacancy defects, which have attracted much attention, exhibit high fluorescence and optical stability at room temperature, with an easily manipulable spin structure, making them a popular direction in the field of quantum precision measurement. In this paper, a$532\mathrm{nm}$ laser and coplanar waveguide microwave radiation structure are used to achieve spin state initialization and coherent manipulation of boron vacancy defects. Optically detected magnetic resonance (ODMR) spectra with high contrast are detected at room temperature, and the influence of external magnetic field on electron spin is studied. On this basis, the coherence characteristics of the defects are further studied by measuring the Rabi oscillation and the ODMR spectra of the nuclear spin are successfully observed. In this paper, the detection of basic properties and coherent manipulation of boron vacancy spin defects in hexagonal boron nitride are realized, which lays the foundation for its further application in quantum information science.