第48卷第3期
2025年3月
合肥工业大学学报
JOURNAL OF HEFEI UNIVERSITY OF TECHNOLOGY (NATURAL SCIENCE)
Vol.48 No.3
Mar. 2025

DOI:10.3969/j.issn.1003-5060.2025.03.008

短波红外自滤波超窄带锗平面结构光电探测器

方昶月,王莉,王艺飞,柳宇健,罗林保

(合肥工业大学微电子学院,安徽合肥230601)

摘要

文章基于锗平面肖特基结构,通过调控光生载流子收集过程中的复合作用,成功研制探测波长位于1290 nm、半高宽仅为8 nm且无需滤光片的自驱动短波红外光电探测器。该器件性能稳定,抗干扰能力强,在接收1290 nm光信号时,器件的串扰值在1278~1311 nm波长范围以外均小于-10 dB,可应用于红外系统信息的采集。文章研究结果可以为相关窄带探测器的设计提供理论和实验参考。

关键词

窄带探测;锗;肖特基结;短波红外;光电探测器

中图分类号:TN215

文献标志码:A

文章编号:1003-5060(2025)03-0343-05

Filterless short-wavelength infrared ultra-narrowband planar-type Ge photodetector

FANG Changyue, WANG Li, WANG Yifei, LIU Yujian, LUO Linbao

(School of Microelectronics, Hefei University of Technology, Hefei 230601, China)

Abstract

In this work, a filterless self-powered short-wavelength infrared narrowband photodetector was realized based on a planar-type Ge Schottky structure by adjusting the recombination in the photogenerated carrier collection process, with a response peak located at 1 290 nm. And the full width at half maximum of the device was only 8 nm. It exhibited high stability and anti-interference ability. Unless the wavelength of the background light was in the range of 1 278-1 311 nm, the crosstalk value of the device remained below -10 dB. It is shown that the device can be applied to the infrared optoelectronic systems, which provides theoretical and experimental references for the design of related narrowband photodetectors.

Keywords

narrowband detection; germanium; Schottky junction; short-wavelength infrared; photodetector

收稿日期:2023-04-03

修回日期:2023-04-24

基金项目:安徽省自然科学基金资助项目(2108085MF229)