基于 $ WS_{2} $ 纳米片和聚乙烯咔唑纳米复合材料的忆阻器的阻变行为

文章介绍基于单层 $ WS_{2} $ 纳米片和聚乙烯咔唑(PVK)纳米材料的 $ Ag/WS_{2}-PVK/Cu $ 忆阻器, 并研究 PVK 质量分数对忆阻器 I-V 特性的影响。 $ Ag/WS_{2}-PVK/Cu $ 忆阻器表现为一次写入多次读取(write-once read-many-times, WORM)的阻变行为, 随着 PVK 质量分数的增加, $ V_{SET} $ 逐渐增加, 开关比略有增加然后减小。I-V 双对数曲线证实了器件的开关机制是陷阱控制的空间电荷限制电流机制, 并用能带图进行了解释, 研究结果为过渡金属硫化物忆阻器开关性能的设计和优化提供了理论依据。

In this paper, $ Ag/WS_{2}-PVK/Cu $ memristors based on monolayer $ WS_{2} $ nanosheets and polyvinylcarbazole (PVK) nanomaterials were reported, and the influence of PVK mass fraction on I-V characteristics of memristors was studied. The results indicate that the $ Ag/WS_{2}-PVK/Cu $ memristors show write-once read-many-times (WORM) memory behavior. With the increase of PVK mass fraction, $ V_{SET} $ increases gradually, and the switch ratio decreases after a slight increase. The I-V double logarithmic curve confirms that the switching mechanism of the device is a trap-controlled space charge limited current (TCSCLC) mechanism, which is explained by the energy band diagram. The research results provide a theoretical basis for the design and optimization of the switching performance of transition metal dichalcogenides (TMDs) memristors.